For cases where the number of carriers are much less than the number of band states, the carrier concentrations can be approximated by using Boltzmann statistics, giving the results below.
The above equation holds true even for lightly doped extrinsic semiconductors as the product np is independent of doping concentration.
This beautiful old building has been restored to its former glory. 这座美丽的老建筑物已恢复了昔日的壮观。
Figure 16a shows an n-type semiconductor in which excess carriers are injected from one side as a result of illumination.
The experimental results can be approximated by the empirical expression
